Comments for AMD and IBM Announce Low K Dielectric Breakthrough in Future 45nm ICs http://vmenow.com/c Tue, 07 Sep 2010 02:11:02 +0100 FeedCreator 1.7.2 http://vmenow.com/c/index.php?option=com_content"&"task=view"&"id=80"&"Itemid=46#pc_49 "The lower the dielectric constant K, the less chance of capacitive tunneling between the gate channel to the substrate" doesn't make sense. gate tunneling is a feol issue, usually addressed bu the use of high-k. low-k is a beol material to reduce wiring cap. Sat, 12 May 2007 05:41:16 +0100